65W GaN PD charger
Release time:
2023-06-16 07:57

PROJECT INTRODUCTION
This solution provides a 65W charger based on GaN device. Thecontroller is based on Champion's Dr. flyback, which integrates ahigh-side mos to achieve ZVS. High switching frequency with GaNdevice to achieve higher power density.
DESIGN SPECIFICATION
| Input Voltage | 90Vac~264Vac |
| Output Voltage | 5V/9V/2V/5V/20V |
| Rated Power | 65W |
| Switching Frequency | 50KHz~250KHz |
| System Efficiency | Peak 93.8% |
FEATURES
· Control strategy is better than traditional QR and ACF, high side & low sideMOSFET ZVS operation;
· Controller with built-in high-side MOS, simple control circuit, high systemreliability and low cost;
· FM & PWM mode to improve efficiency
MAIN TOPOLOGY

MAIN DEVICES
| Function | Part Number | Brand |
| Input Fuse | 044303.5 | Littelfuse |
| GaN FET | DTA E601513SEO | Delta |
| Rectifier Diode | SRT1ONO47LD56TR-G | Sanrise |
| Controller | Dr.flyback | Champion |
| Output Filter Capacitor | SVZTEM221E09EOORA | Aishi |
EFFICIENCY DATA

实测结果和⼯作波形

110V 满载 原边主管ZVS

230V 满载原边主管ZVS
实测结果和⼯作波形

测试条件:230VAC输入 20V/325A输出
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