iPowerSIM, WWW.IPOWERSIM.COM, developed by Allied Group, is a systematic free online simulation tool for circuit design, power loss, temperature and system efficiency evaluation of traditional Si power devices and the 3rd generation SiC or GaN semiconductors, covering almost all power electronics applications.
From Buck and Boost basic circuits, to LLC resonance, totem-pole PFC, three-phase inverter, Vienna PFC and MMC topology, up to 30 kinds of most popular power electronic topologies are included.
Whether it is a traditional Si device, such as IGBTs, MOSFETs, Diodes, etc., or a wide band gap semiconductor such as SiC, GaN FETs, Diodes, HEMTs, etc., the most suitable model can be easily found in iPowerSIM.
Wide Range Applications
Covering the most major topologies and the most advanced component models, from PD charger, adapter and LED driver, to Bit-con miner, server, charging pile, PV inverter and E-vehicle, to MW or even GW level traction locomotives, grid HVDC transmission, etc., iPowerSIM provides you with the optimal topologies, appropriate component models for the accurate simulation results of important parameters such as loss, efficiency and temperature rise.
iPowerSIM is very easy to use. Completing registration then you can simulate online without any download or installration, and the result can be saved as PDF directly. iPowerSIM simulation speed is extremely fast, for example Buck topology simulation only takes few seconds, three-level or MMC topology only takes a few minutes; iPowerSIM has extremely high simulation accuracy. By referring to specifications, communicating with device manufacturers and actually measuring the dynamic characteristics of devices, Allied Group's engineers continuously verify the device and circuit modelling to make the simulation results closer to the actual design and more meaningful for reference.
You can select up to 5 component models (such as MOSFETs) for simultaneous simulation under the same conditions, and the 5 results will be saved at the same time, which greatly facilitates engineers to compare the device’s loss with different specs and even with different material, such as Si MOSFETs and SiC MOSFETs under the same design conditions. These comparison results are quite meaningful for engineers to understand the characteristics of each model.
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